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3.3V Single-Piece 16Mb Nonvolatile SRAM
with Clock
AC ELECTRICAL CHARACTERISTICS
(V CC = 3.3V ±0.3V, T A = -40 ° C to +85 ° C.)
PARAMETER
Read Cycle Time
Access Time
OE to Output Valid
RTC OE to Output Valid
CE or CS to Output Valid
OE or CE or CS to Output Active
Output High Impedance from
Deselection
Output Hold from Address
Write Cycle Time
Write Pulse Width
Address Setup Time
Write Recovery Time
Output High Impedance
from WE
Output Active from WE
Data Setup Time
Data Hold Time
Chip-to-Chip Setup Time
SYMBOL
t RC
t ACC
t OE
t OEC
t CO
t COE
t OD
t OH
t WC
t WP
t AW
t WR1
t WR2
t ODW
t OEW
t DS
t DH1
t DH2
t CCS
(Note 2)
(Note 2)
(Note 3)
(Note 4)
(Note 5)
(Note 2)
(Note 2)
(Note 6)
(Note 4)
(Note 5)
CONDITIONS
DS3070W-100
MIN MAX
100
100
50
60
100
5
40
5
100
75
0
5
20
40
5
40
0
20
40
UNITS
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
POWER-DOWN/POWER-UP TIMING
(T A = -40 ° C to +85 ° C.)
PARAMETER
V CC Fail Detect to CE , CS , and
WE Inactive
SYMBOL
t PD
(Note 7)
CONDITIONS
MIN
TYP
MAX
1.5
UNITS
μs
V CC Slew from V TP to 0V
V CC Slew from 0V to V TP
V CC Valid to CE , CS , and WE
Inactive
V CC Valid to End of Write
Protection
t F
t R
t PU
t REC
150
150
2
125
μs
μs
ms
ms
V CC Fail Detect to RST Active
t RPD
(Note 1)
3.0
μs
V CC Valid to RST Inactive
t RPU
(Note 1)
40
350
525
ms
_____________________________________________________________________
3
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